Toshiba Electronic Devices & Storage Corporation Releases 100V N-Channel Power MOSFETs for Industrial Applications with the Industry's Lowest-in-Class On-Resistance

Expanding the line-up of the low-voltage U-MOS IX-H power MOSFET series

TOKYO — (BUSINESS WIRE) — December 18, 2017Toshiba Electronic Devices & Storage Corporation has today started to ship “TPH3R70APL” and “TPN1200APL,” new 100V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are suitable for power supply applications in industrial equipment.

This press release features multimedia. View the full release here: http://www.businesswire.com/news/home/20171218005375/en/

Toshiba Electronic Devices & Storage Corporation:100V N-channel power MOSFETs "TPH3R70APL" for indus ...

Toshiba Electronic Devices & Storage Corporation:100V N-channel power MOSFETs "TPH3R70APL" for industrial applications. (Photo: Business Wire)

Fabricated with the company’s latest low-voltage U-MOS IX-H trench process, which optimizes the element structure, the TPH3R70APL and TPN1200APL deliver the industry’s lowest-in-class On-resistance[1]. In addition, compared with the current devices using the U-MOS VIII-H process, the new devices have lower “RDS(ON) × Qoss”, On-resistance times output charge, and “RDS(ON) × QSW”, On-resistance times gate switch charge, key figures of merit for MOSFETs for switching applications[2].

Toshiba Electronic Devices & Storage Corporation will continue to expand its MOSFET portfolio in line with market trends in order to help improve power supply efficiency.

Applications

- Power supplies for industrial equipment
- Motor control equipment

Features

- Industry’s lowest-in-class On-resistance[1]
RDS(ON) = 3.7mΩ (max) @ VGS = 10V (TPH3R70APL)
RDS(ON) = 11.5mΩ (max) @ VGS = 10V (TPN1200APL)
- Low output charge and low gate switch charge
- Allows 4.5V logic level drive

 

Main Specifications

 

 (Unless otherwise specified, @Ta=25°C)

Part

number

  Absolute

maximum ratings

  Drain-source

On-resistance

RDS(ON) max

(mΩ)

 

Total

gate

charge

Qg
typ.

(nC)

 

Gate
switch
charge

Q sw
typ.
(nC)

 

 

Output
charge
Q oss
typ.

(nC)

 

Input

capacitance
C iss
typ.

(pF)

  Package

Drain-

source

voltage
V DSS (V)

 

Drain

current
(DC)
I D
@T c =
25℃
(A)

@V
GS =
10V

 

@V
GS =
4.5V

TPH3R70APL 100 90 3.7 6.2 67 21 74 4850

SOP
Advance

TPN1200APL     40   11.5   20   24   7.5   24   1425  

TSON
Advance

 

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