High Repetitive Unclamped Inductive Switching Capability, High Short-Circuit Withstand Rated SiC Solutions to be Demonstrated in Hall 6, Booth 318 at PCIM Europe June 5-7ALISO VIEJO, Calif., May 24, 2018 — (PRNewswire) — Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced it will be expanding its Silicon Carbide (SiC) MOSFET and SiC diode product portfolios early next quarter, including samples of its next-generation 1200-volt (V), 25 mOhm and 80 mOhm SiC MOSFET devices; next-generation 700 V, 50 A Schottky barrier diode (SBD) and corresponding die. These SiC solutions, along with other recently announced devices in the SiC SBD/MOSFET product families, will be demonstrated June 5-7 in hall 6, booth 318 at PCIM Europe 2018, held at the Exhibition Centre in Nuremberg, Germany.
As Microsemi continues to expand development efforts for its SiC product family, it has become one of the few suppliers providing a range of Si/SiC power discrete and module solutions to the market. These next-generation SiC MOSFETs are ideally suited for a number of applications within the industrial and automotive markets, including hybrid electric vehicle (HEV)/EV charging, conductive/inductive onboard chargers (OBCs), DC-DC converters and EV powertrain/traction control. They can also be used for switch mode power supplies, photovoltaic (PV) inverters and motor control in medical, aerospace, defense and data center applications.
"Fast adoption of SiC solutions for applications such as EV charging, DC-DC converters, powertrain, medical and industrial equipment, and aviation actuation demand a high degree of efficiency, safety and reliability on components used in such systems," said Leon Gross, vice president and business unit manager for Microsemi's Power Discretes and Modules business unit. "Microsemi's next-generation SiC MOSFET and SiC diode families will include AEC-Q101 qualifications, which will insure high reliability while ruggedness is demonstrated by high repetitive unclamped inductive switching (UIS) capability at rated current without degradation or failures."
According to market research firm Technavio, the global SiC market for semiconductor applications is expected to reach nearly $540.5 million by 2021, growing at a compound annual growth rate (CAGR) of more than 18 percent. The firm also forecasts the global SiC market for automotive semiconductor applications at nearly 20 percent CAGR by 2021. Microsemi is well-positioned with these trends, with its SiC MOSFET and Schottky barrier diode devices avalanche-rated with a high short-circuit withstand rating for robust operation, and the capabilities necessary to enable these growing application trends.
Microsemi's next-generation 1200 V, 25/40/80 mOhm SiC MOSFET devices and die as well as its next-generation 1200 V and 700 V SiC SBD devices offer customers attractive benefits in comparison to competing Si/SiC diode/MOSFET and IGBT solutions, including more efficient switching at higher switching frequencies as well as higher avalanche/UIS rating and higher short-circuit withstand rating for rugged and reliable operation. For example, SiC MOSFETs are developed with an ideal balance of specific on-resistance, low gate and thermal resistances, and low gate threshold voltage and capacitance for reliable operation. Designed for high yield processes and low parameter variation across temperature, they operate at higher efficiency (in comparison to Si and IGBT solutions) across high junction temperature (175 degrees Celsius) to extend battery systems like those in HEV/EV applications.
The newly sampling devices also offer excellent gate integrity and high gate yield as verified through high temperature reverse bias (HTRB) and time-dependent dielectric breakdown (TBBD) tests, which are part of its AEC-Q101 qualification in progress. Other key features include:
- High UIS capability, offering 1.5x to 2x higher than competitive SiC MOSFETs and GaN devices for avalanche ruggedness;
- High short-circuit rating ranging from 1.5x to 5x higher than competitor SiC MOSFET devices for more rugged operation;
- Up to 10x lower failure-in-time (FIT) rate than comparable Si IGBTs at rated voltage for neutron susceptibility and with comparable performance against SiC competition pertaining to neutron irradiation; and
- Higher SiC power density versus Si, enabling smaller magnetics/transformers/DC bus capacitors and less cooling elements for more compact form factor to lower overall system costs.
Demonstrations at PCIM June 5-7 in Hall 6, Booth 318
Microsemi's product experts will be at the company's booth at PCIM during show hours to demonstrate its next-generation SiC solutions, and in particular the company's recently announced next-generation 1200 V, 40 mOhm SiC MOSFET device and 1200V, 10/30/50A SiC diode products. For more information or to request a meeting at the show, visit https://www.microsemi.com/details/346-pcim-europe.
Microsemi's next-generation 1200 V SiC MOSFET devices and die as well as its next-generation 1200 V and 700 V SiC SBDs are sampling now. For more information, visit https://www.microsemi.com/product-directory/discretes/3613-silicon-carbide-sic or contact firstname.lastname@example.org.
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www.microsemi.com.
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"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements related to it expanding its Silicon Carbide (SiC) MOSFET and SiC diode product portfolios early next quarter, including samples of its next-generation 1200-volt (V), 25 mOhm and 80 mOhm SiC MOSFET devices,; next-generation 700 V, 50 A Schottky barrier diode (SBD), and corresponding die, and its potential effects on future business, are forward-looking statements. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs in implementing the company's acquisitions and divestitures strategy or integrating acquired companies, uncertainty as to the future profitability of acquired businesses and realization of accretion from acquisition transactions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.